A QUANTITATIVE STUDY ON TUNNELING CONDUCTIVITY OF A FLOATING-GATE MOSFET IN TERMS OF THE OXIDE-LAYER WIDTH (Q3635923)
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scientific article; zbMATH DE number 5575918
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| English | A QUANTITATIVE STUDY ON TUNNELING CONDUCTIVITY OF A FLOATING-GATE MOSFET IN TERMS OF THE OXIDE-LAYER WIDTH |
scientific article; zbMATH DE number 5575918 |
Statements
A QUANTITATIVE STUDY ON TUNNELING CONDUCTIVITY OF A FLOATING-GATE MOSFET IN TERMS OF THE OXIDE-LAYER WIDTH (English)
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6 July 2009
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tunneling conductivity
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floating-gate MOSFET
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oxide-layer thickness
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electronic desity of states
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0.6763966083526611
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0.6668985486030579
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0.6419374942779541
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0.6393810510635376
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