Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells (Q455240)
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scientific article; zbMATH DE number 6090327
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| English | Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells |
scientific article; zbMATH DE number 6090327 |
Statements
Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells (English)
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4 October 2012
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intense laser field
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intersubband transitions
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impurity binding energy
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0.8864909
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0.8776351
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