Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells (Q455240)
From MaRDI portal
| This is the item page for this Wikibase entity, intended for internal use and editing purposes. Please use this page instead for the normal view: Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells |
scientific article; zbMATH DE number 6090327
| Language | Label | Description | Also known as |
|---|---|---|---|
| default for all languages | No label defined |
||
| English | Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells |
scientific article; zbMATH DE number 6090327 |
Statements
Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells (English)
0 references
4 October 2012
0 references
intense laser field
0 references
intersubband transitions
0 references
impurity binding energy
0 references
0.8864909
0 references
0.8776351
0 references