Theoretical study on the effect of vacancy defect reconstruction on electron transport in Si-C nanotubes (Q4911443)
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scientific article; zbMATH DE number 6145234
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| English | Theoretical study on the effect of vacancy defect reconstruction on electron transport in Si-C nanotubes |
scientific article; zbMATH DE number 6145234 |
Statements
THEORETICAL STUDY ON THE EFFECT OF VACANCY DEFECT RECONSTRUCTION ON ELECTRON TRANSPORT IN <font>Si</font>-<font>C</font> NANOTUBES (English)
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15 March 2013
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nanotube
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SiCNT
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armchair-zigzag
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defects
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vacancy
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0.7371298670768738
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0.7118443250656128
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0.6949702501296997
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0.680993914604187
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