Effects of unintended dopants on I-V characteristics of the double-gate MOSFETS, a simulation study (Q4922244)
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scientific article; zbMATH DE number 6168081
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| English | Effects of unintended dopants on I-V characteristics of the double-gate MOSFETS, a simulation study |
scientific article; zbMATH DE number 6168081 |
Statements
Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study (English)
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29 May 2013
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current-voltage characteristics
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double gate
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MOSFET
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unintended dopant
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0.7520961761474609
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0.7363960146903992
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0.7332011461257935
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0.7293090224266052
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