Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study (Q4922244)
From MaRDI portal
scientific article; zbMATH DE number 6168081
Language | Label | Description | Also known as |
---|---|---|---|
English | Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study |
scientific article; zbMATH DE number 6168081 |
Statements
Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study (English)
0 references
29 May 2013
0 references
current-voltage characteristics
0 references
double gate
0 references
MOSFET
0 references
unintended dopant
0 references