DC gain analysis of scaled CMOS op amp in sub-100 nm technology nodes: A research based on channel length modulation effect (Q615254)
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scientific article; zbMATH DE number 5832612
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| English | DC gain analysis of scaled CMOS op amp in sub-100 nm technology nodes: A research based on channel length modulation effect |
scientific article; zbMATH DE number 5832612 |
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DC gain analysis of scaled CMOS op amp in sub-100 nm technology nodes: A research based on channel length modulation effect (English)
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5 January 2011
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analog circuits
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complementary metal-oxide-semiconductor (CMOS) analog integrated circuits
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modeling
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operational amplifiers
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simulation
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technology node
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0.7016176581382751
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0.6294583678245544
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0.629101037979126
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0.6265674829483032
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0.6240447759628296
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