Impact of strain relaxation of alGaN barrier layer on the performance of high Al-content AlGaN/GaN HEMT (Q851263)
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scientific article; zbMATH DE number 5073862
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| English | Impact of strain relaxation of alGaN barrier layer on the performance of high Al-content AlGaN/GaN HEMT |
scientific article; zbMATH DE number 5073862 |
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Impact of strain relaxation of alGaN barrier layer on the performance of high Al-content AlGaN/GaN HEMT (English)
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17 November 2006
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AlGaN/GaN
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high electron mobility transistor
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strain relaxation
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0.7054081559181213
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0.6839838027954102
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0.6687939763069153
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0.6602959632873535
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