Impact of strain relaxation of alGaN barrier layer on the performance of high Al-content AlGaN/GaN HEMT (Q851263)

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Impact of strain relaxation of alGaN barrier layer on the performance of high Al-content AlGaN/GaN HEMT
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    Impact of strain relaxation of alGaN barrier layer on the performance of high Al-content AlGaN/GaN HEMT (English)
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    17 November 2006
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    AlGaN/GaN
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    high electron mobility transistor
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    strain relaxation
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