Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile (Q960886)
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scientific article; zbMATH DE number 5687524
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| English | Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile |
scientific article; zbMATH DE number 5687524 |
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Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile (English)
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29 March 2010
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contact-insulating boundary conditions
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boundary layer
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initial layer
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one space dimension
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entropy-energy method
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0.9404404163360596
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0.920339822769165
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0.9189867973327636
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0.9106091260910034
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