Mathematical analysis of a model for substitutional diffusion

DOI10.1098/RSPA.1990.0095MaRDI QIDQ3356786zbMATH OpenOpenAlexFDO

Authors J. R. King

Publication date 1990

Published in Proceedings of the Royal Society of London. Series A: Mathematical and Physical Sciences (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1098/rspa.1990.0095

zbMATH Keywords

semiconductorssimilarity solutionstravelling waves

Mathematics Subject Classification ID

Reaction-diffusion equations (35K57) PDEs in connection with optics and electromagnetic theory (35Q60)

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• Self-similar solutions for infiltration of dopant into semiconductors
• Modelling diffusion and replacement
• ASYMPTOTIC ANALYSIS OF AN IMPURITY—DEFECT PAIR-DIFFUSION MODEL
• Self-similar solutions for diffusion in semiconductors
• Asymptotic analysis of some two-dimensional diffusion problems
• Self-similar solutions for a free boundary problem in the doping of semiconductors
• Numerical solution of a 2D-diffusion reaction problem modelling the density of di-vacancies and vacancies in a metal
• Nonlinear reaction-diffusion systems with variable diffusivities: Lie symmetries, ansätze and exact solutions
• Nonlinear effects in the theory of impurity diffusion in solids
• Nonlinear systems of PDEs admitting infinite-dimensional Lie algebras and their connection with Ricci flows

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