Monte Carlo simulation of semiconductor devices

DOI10.1016/0010-4655(91)90220-FMaRDI QIDQ1366079zbMATH OpenOpenAlexFDO

Authors Geir U. Jensen, Bjørnar Lund, Tor A. Fjeldly, Michael Shur

Publication date 10 November 1997

Published in Computer Physics Communications (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/0010-4655(91)90220-f

zbMATH Keywords

Monte Carlo simulationVLSI circuitscomputer-aided designsemiconductor devicesHeterostructure Field-Effect Transistors

Mathematics Subject Classification ID

Monte Carlo methods (65C05) Technical applications of optics and electromagnetic theory (78A55) PDEs in connection with optics and electromagnetic theory (35Q60) Applications to the sciences (65Z05)

Cites work

• scientific article; zbMATH DE number 41859 (Why is no real title available?)
• Computer simulation of III-V MESFET's, MODFET's and MIS-like FET's
• Electronic transport in semiconductors at high energy
• Molecular dynamics extensions of Monte Carlo simulation in semiconductor device modeling
• Monte Carlo calculation of electronic noise in semiconductors
• Monte Carlo particle modelling of small semiconductor devices
• Monte Carlo simulation of charge-carrier behavior in electric fields
• On the numerical solution of the three-dimensional semiconductor device equations on vector-concurrent computers
• POT4A - A program for the direct solution of Poisson's equation in complex geometries
• Pseudo-random trees in Monte Carlo
• Simulation of advanced semiconductor devices using supercomputers
• Theory of Impurity Scattering in Semiconductors

Cited in

(1)

• Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs

Describes a project that uses

Uses Software

• POT4A

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