The effect of uniaxial stress on band structure and electron mobility of silicon

DOI10.1016/J.MATCOM.2007.10.004zbMath1159.82321OpenAlexW1979257771WikidataQ62600255 ScholiaQ62600255MaRDI QIDQ1010026

J. Martínez

Publication date: 3 April 2009

Published in: Mathematics and Computers in Simulation (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.matcom.2007.10.004

zbMATH Keywords

Monte Carlo methodband structureempirical pseudopotential methodlow-field mobilityuniaxial strain/stress

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Transport processes in time-dependent statistical mechanics (82C70)

Cites Work

• Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering
• Deformation Potentials in Silicon. I. Uniaxial Strain

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