On a Petrov-Galerkin method for the electrical and thermal behaviour of semiconductor devices in two dimensions
exponentially fitted finite difference approximationsFourier equationPetrov-Galerkin methodPoisson equationScharfetter-Gummel schemesemiconductor devices
Laplace operator, Helmholtz equation (reduced wave equation), Poisson equation (35J05) Partial differential equations of mathematical physics and other areas of application (35Q99) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Applications to the sciences (65Z05) Motion of charged particles (78A35) Technical applications of optics and electromagnetic theory (78A55)
The author considers the stationary case of the thermal behaviour of semiconductor devices in two dimensions. A non-standard Petrov-Galerkin method is used to obtain a discretization of the weak formulation of the corresponding differential equations - the Poisson equation of elliptic type, the nonlinear Fourier equation, and two continuity equations. The standard finite difference approximations on an arbitrary mesh is obtained for the Poisson and Fourier equations and exponentially fitted finite difference approximations for the two continuity equations. The latter are in fact the usual generalizations to two dimensions of the well-known Scharfetter-Gummel scheme for one-dimensional problems.
- scientific article; zbMATH DE number 4066256
- Finite Element Solution of the Fundamental Equations of Semiconductor Devices. I
- scientific article; zbMATH DE number 4084948
- A Tetrahedral Mixed Finite Element Method for the Stationary Semiconductor Continuity Equations
- Convergence of a second-order accurate Petrov-Galerkin scheme for convection-diffusion problems in semiconductors
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