Continuation methods in semiconductor device simulation
From MaRDI portal
Publication:1119373
DOI10.1016/0377-0427(89)90147-7zbMath0671.65100OpenAlexW1986344639MaRDI QIDQ1119373
W. M. jun. Coughran, R. Kent Smith, Maria Rosário Pinto
Publication date: 1989
Published in: Journal of Computational and Applied Mathematics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/0377-0427(89)90147-7
Technical applications of optics and electromagnetic theory (78A55) Partial differential equations of mathematical physics and other areas of application (35Q99) Applications to the sciences (65Z05)
Uses Software
Cites Work
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- On the monotone convergence of Newton's method
- On the computation of multi-dimensional solution manifolds of parametrized equations
- Global approximate Newton methods
- An adaptive, multi-level method for elliptic boundary value problems
- Ein lokal überlinear konvergentes Verfahren zur Bestimmung von Rückkehrpunkten implizit definierter Raumkurven
- Deflation Techniques and Block-Elimination Algorithms for Solving Bordered Singular Systems
- Computation of Current-Voltage Characteristics in a Semiconductor Device using Arc-length Continuation
- Numerical Methods for Semiconductor Device Simulation
- Some A Posteriori Error Estimators for Elliptic Partial Differential Equations
- Solution Fields of Nonlinear Equations and Continuation Methods