Hot electron transport in semiconductors

DOI10.1007/BF00945017MaRDI QIDQ1264074zbMATH OpenOpenAlexWikidataFDO

Authors W. Hänsch, Christian Schmeiser

Publication date 1989

Published in ZAMP. Zeitschrift für angewandte Mathematik und Physik (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1007/bf00945017

zbMATH Keywords

drift-diffusion approximationsingular perturbation theorystationary flow

Mathematics Subject Classification ID

Diffusion (76R50) Basic methods in fluid mechanics (76M99)

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Cites work

• scientific article; zbMATH DE number 3844984 (Why is no real title available?)
• scientific article; zbMATH DE number 3654574 (Why is no real title available?)
• Asymptotic Analysis of Singular Singularly Perturbed Boundary Value Problems
• Asymptotic solutions of singular perturbation problems for linear differential equations of elliptic type
• Uniform Asymptotic Representation of Solutions of the Basic Semiconductor-Device Equations

Cited in

(9)

• Energy transport in semiconductor devices
• Theory of the flow of electrons and holes in Germanium and other semiconductors
• scientific article; zbMATH DE number 2166413 (Why is no real title available?)
• Energy-Transport Models for Charge Carriers Involving Impact Ionization in Semiconductors
• On a mathematical model for hot carrier injection in semiconductors
• A stochastic approach to hopping transport in semiconductors
• Hydrodynamic modeling of hot-carrier effects in a PN junction solar cell
• Electron transport in semiconductor superlattices
• Nonlinear stability of smooth solutions of the energy-transport model for semiconductors

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