Influence of oxygen adsorption on the surface potential of a metal oxide semiconductor

DOI10.1007/S11182-012-9721-9zbMATH Open1253.82093OpenAlexW2069081388MaRDI QIDQ1762272FDOQ1762272

Authors: V. I. Gaman 

Publication date: 23 November 2012

Published in: Russian Physics Journal (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s11182-012-9721-9

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zbMATH Keywords

chemisorptionsurface potentialadsorption heatmetal oxide semiconductorsurface density of oxygen ions

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cited In (4)

• An analysis of flexural wave band gaps of locally resonant beams with continuum beam resonators
• A quantitative discussion on band-gap energy and carrier density of CdO in terms of temperature and oxygen partial pressure
• Physical principles of operation of oxidizing gas sensors based on metal oxide semiconductors
• Thermodynamics of optically assisted desorption of oxygen from \(\mathrm{TiO}_2\) nanoparticle surface

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