Semiconductor device simulation using a viscous hydrodynamic model.
From MaRDI portal
Publication:1871019
DOI10.1016/S0045-7825(02)00441-3zbMath1078.76541MaRDI QIDQ1871019
Stefano Micheletti, Riccardo Sacco, Luca Vincenzo Ballestra
Publication date: 6 May 2003
Published in: Computer Methods in Applied Mechanics and Engineering (Search for Journal in Brave)
Navier-Stokes equations; upwinding; mixed finite element scheme; stabilized finite difference scheme
76D05: Navier-Stokes equations for incompressible viscous fluids
76M20: Finite difference methods applied to problems in fluid mechanics
82D37: Statistical mechanics of semiconductors
76M10: Finite element methods applied to problems in fluid mechanics
Related Items
Hydrodynamic modeling of hot-carrier effects in a PN junction solar cell, Stabilized 3D finite elements for the numerical solution of the Navier-Stokes equations in semiconductors
Cites Work
- Unnamed Item
- Unnamed Item
- A finite element formulation for the hydrodynamic semiconductor device equations
- Numerical solution of two-carrier hydrodynamic semiconductor device equations employing a stabilized finite element method
- Numerical approximation of hyperbolic systems of conservation laws
- Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors
- Mixed and Hybrid Finite Element Methods
- Extended Hydrodynamical Model of Carrier Transport in Semiconductors
- Monte Carlo evaluation of the transport coefficients in a n+ – n – n+ silicon diode
- A STREAMLINE-UPWINDING/PETROV-GALERKIN METHOD FOR THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL
- SIMULATION OF n+−n−n+ DEVICES BY A HYDRODYNAMIC MODEL: SUBSONIC AND SUPERSONIC FLOWS
