Semiconductor device simulation using a viscous hydrodynamic model.

DOI10.1016/S0045-7825(02)00441-3MaRDI QIDQ1871019zbMATH OpenFDO

Authors Stefano Micheletti, Riccardo Sacco, Luca Vincenzo Ballestra

Publication date 6 May 2003

Published in Computer Methods in Applied Mechanics and Engineering (Search for Journal in Brave)

zbMATH Keywords

Navier-Stokes equationsupwindingmixed finite element schemestabilized finite difference scheme

Mathematics Subject Classification ID

Finite difference methods applied to problems in fluid mechanics (76M20) Navier-Stokes equations for incompressible viscous fluids (76D05) Finite element methods applied to problems in fluid mechanics (76M10) Statistical mechanics of semiconductors (82D37)

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Cites work

• scientific article; zbMATH DE number 962851 (Why is no real title available?)
• scientific article; zbMATH DE number 962854 (Why is no real title available?)
• A STREAMLINE-UPWINDING/PETROV-GALERKIN METHOD FOR THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL
• A finite element formulation for the hydrodynamic semiconductor device equations
• Extended Hydrodynamical Model of Carrier Transport in Semiconductors
• Mixed and Hybrid Finite Element Methods
• Monte Carlo evaluation of the transport coefficients in a n⁺ – n – n⁺ silicon diode
• Numerical approximation of hyperbolic systems of conservation laws
• Numerical solution of two-carrier hydrodynamic semiconductor device equations employing a stabilized finite element method
• SIMULATION OF n+−n−n+ DEVICES BY A HYDRODYNAMIC MODEL: SUBSONIC AND SUPERSONIC FLOWS
• Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors

Cited in

(8)

• Numerical solutions of a viscous‐hydrodynamic model for semiconductors: the supersonic case
• On a viscous-hydrodynamic model for semiconductors: Numerical simulation and stability analysis
• Numerical problems in semiconductor simulation using the hydrodynamic model: a second-order finite difference scheme.
• Stabilized 3D finite elements for the numerical solution of the Navier-Stokes equations in semiconductors
• Hydrodynamic Modeling of an Ultra-Thin Base Silicon Bipolar Transistor
• Hydrodynamic modeling of hot-carrier effects in a PN junction solar cell
• Full hydrodynamic simulation of GaAs MESFETs
• scientific article; zbMATH DE number 1302418 (Why is no real title available?)

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