Convergent algorithms suitable for the solution of the semiconductor device equations
Nonlinear elliptic equations (35J60) Numerical computation of solutions to systems of equations (65H10) Numerical methods for partial differential equations, initial value and time-dependent initial-boundary value problems (65M99) Numerical methods for partial differential equations, boundary value problems (65N99)
Two algorithms are proposed to solve systems of algebraic equations generated by a discretization procedure of the weak formulation of boundary value problems for systems of nonlinear elliptic equations. The first algorithm, Newton-CG-MG, is suitable for systems with gradient mappings, while the second, Newton-CE-MG, can be applied to more general systems. Convergence theorems are proved and application to the semiconductor device modelling is described.
- A two-dimensional finite element algorithm for the simultaneous solution of the semiconductor device equations with automatic convergence
- An Approximate Newton Method for the Solution of the Basic Semiconductor Device Equations
- A COMPARISON OF SOME METHODS FOR THE SOLUTION OF THE NONLINEAR POISSON EQUATION IN SEMICONDUCTOR DEVICE MODELLING
- Nonlinear boundary value problems with application to semiconductor device equations
- Preconditioned CG-type methods for solving the coupled system of fundamental semiconductor equations
- Nonlinear boundary value problems with application to semiconductor device equations
- A COMPARISON OF SOME METHODS FOR THE SOLUTION OF THE NONLINEAR POISSON EQUATION IN SEMICONDUCTOR DEVICE MODELLING
- USING GREEN'S FUNCTIONS TO IMPROVE CONJUGATE GRADIENT CONVERGENCE FOR THE SEMI‐CONDUCTOR EQUATIONS
- scientific article; zbMATH DE number 1782369 (Why is no real title available?)
- Efficient algorithm based on two-grid method for semiconductor device problem
- Convergence analysis of a partial differential algebraic system from coupling a semiconductor model to a circuit model
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