A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle
From MaRDI portal
Publication:1931019
DOI10.1016/j.mcm.2011.09.026zbMath1255.82064MaRDI QIDQ1931019
Vittorio Romano, Giovanni Mascali
Publication date: 24 January 2013
Published in: Mathematical and Computer Modelling (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.mcm.2011.09.026
82D37: Statistical mechanics of semiconductors
35Q41: Time-dependent Schrödinger equations and Dirac equations
35Q20: Boltzmann equations
35Q82: PDEs in connection with statistical mechanics
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Cites Work
- Unnamed Item
- A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands
- Subband decomposition approach for the simulation of quantum electron transport in nanostructures
- A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
- Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices
- The maximum entropy method
- Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle
- The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models
- A nonlinear determination of the distribution function of degenerate gases with an application to semiconductors
- Quantum-corrected drift-diffusion models for transport in semiconductor devices
- Non parabolic band transport in semiconductors: closure of the moment equations
- Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
- Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
- Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver
- Information Theory and Statistical Mechanics
- DIFFUSIVE TRANSPORT OF PARTIALLY QUANTIZED PARTICLES: EXISTENCE, UNIQUENESS AND LONG-TIME BEHAVIOUR
- Quantum corrections to the semiclassical hydrodynamical model of semiconductors based on the maximum entropy principle
- Exact Maximum Entropy Closure of the Hydrodynamical Model for Si Semiconductors: The 8-Moment Case
- A Deterministic Solver to the Boltzmann-Poisson System Including Quantization Effects for Silicon-MOSFETs
- Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle
