Effective mass of bound electron pairs in two-dimensional materials with a gapped band spectrum
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Publication:2074539
Abstract: Bound electron pairs formed due to the peculiarities of the band dispersion of electrons in crystals attract much interest because they can carry charge and spin even in the absence of band conductivity. However, such an important parameter of bound pairs as the effective mass is still poorly understood. We carry out this study for materials described by the Bernevig-Hughes-Zhang model in the electron-hole symmetric case and find a clear relationship between the effective mass and the energy of a bound pair at rest. The dependence of mass on energy has a specific form for each of different types of pairs, but a common feature is the change of the mass sign when energy passes through the middle of the band gap. The sign is negative when the energy is in the lower half of the gap, and positive in the upper half.
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Cites work
Cited in
(4)- A Simple Theoretical Analysis of the Effective Electron Mass in Heavily Doped III–V Semiconductors in the Presence of Band-Tails
- scientific article; zbMATH DE number 3962186 (Why is no real title available?)
- A simple theoretical analysis of the effective electron mass in III–V, ternary and quaternary materials in the presence of light waves
- Quasi-bound electron pairs in two-dimensional materials with a Mexican-hat dispersion
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