The optical gain of Ge nanowires engineered by the [100] direction uniaxial stress perpendicular to the nanowire axis

DOI10.1016/J.PHYSLETA.2021.127526MaRDI QIDQ2234637zbMATH OpenOpenAlexFDO

Authors Wen Xiong, Guang-Ping Ye, Qiao-Ying Xu, Le-Le Gong, Yin Wang

Publication date 19 October 2021

Published in Physics Letters. A (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.physleta.2021.127526

zbMATH Keywords

[100 direction uniaxial stress]eight-band effective-mass theoryGe nanowiresindirect-band-gap semiconductoroptical gain

Mathematics Subject Classification ID

Quantum theory (81-XX) Statistical mechanics, structure of matter (82-XX)

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