Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications

DOI10.1016/J.CAM.2013.09.076zbMath1322.78017OpenAlexW2012890617MaRDI QIDQ2349691

Christian Gontrand, Saïda Latreche, Maya Lakhdara

Publication date: 17 June 2015

Published in: Journal of Computational and Applied Mathematics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.cam.2013.09.076

zbMATH Keywords

numerical modellingdrift-diffusion (DDM) modelheterojunction bipolar transistor (HBT)nanometricSiGe(C)thickness base

Mathematics Subject Classification ID

Finite difference methods applied to problems in optics and electromagnetic theory (78M20) Iterative numerical methods for linear systems (65F10) Statistical mechanics of semiconductors (82D37) Optimization problems in optics and electromagnetic theory (78M50)

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