Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications
DOI10.1016/J.CAM.2013.09.076zbMath1322.78017OpenAlexW2012890617MaRDI QIDQ2349691
Christian Gontrand, Saïda Latreche, Maya Lakhdara
Publication date: 17 June 2015
Published in: Journal of Computational and Applied Mathematics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.cam.2013.09.076
numerical modellingdrift-diffusion (DDM) modelheterojunction bipolar transistor (HBT)nanometricSiGe(C)thickness base
Finite difference methods applied to problems in optics and electromagnetic theory (78M20) Iterative numerical methods for linear systems (65F10) Statistical mechanics of semiconductors (82D37) Optimization problems in optics and electromagnetic theory (78M50)
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