Theory of carrier mediated ferromagnetism in dilute magnetic oxides
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Publication:2459484
Abstract: We analyze the origin of ferromagnetism as a result of carrier mediation in diluted magnetic oxide semiconductors in the light of the experimental evidence reported in the literature. We propose that a combination of percolation of magnetic polarons at lower temperature and Ruderman-Kittel-Kasuya-Yosida ferromagnetism at higher temperature may be the reason for the very high critical temperatures measured (up to ~700 K).
Recommendations
- Carrier States and Ferromagnetism in Diluted Magnetic Semiconductors
- PHONONIC APPROACH TO FERROMAGNETIC SEMICONDUCTORS
- Diluted magnetic semiconductor at finite temperature
- Ferromagnetism of semiconductor structures with indirect interaction of magnetic impurities via the quasi-two-dimensional conductive channel
- Curie temperature of the two-band model for diluted magnetic semiconductors in coherent potential approximation
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