3D quantum transport solver based on the perfectly matched layer and spectral element methods for the simulation of semiconductor nanodevices

DOI10.1016/J.JCP.2007.07.028MaRDI QIDQ2462465zbMATH OpenOpenAlexDBLPWikidataFDO

Authors Candong Cheng, Joonho Lee, Kim Hwa Lim, Hisham Z. Massoud, Qing Huo Liu

Publication date 30 November 2007

Published in Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL http://europepmc.org/articles/pmc2083569

zbMATH Keywords

nanodevice simulationopen boundary conditionperfectly matched layer (PML)quantum transportSchrödinger equationspectral element method (SEM)tensor effective mass

Mathematics Subject Classification ID

Spectral, collocation and related methods for boundary value problems involving PDEs (65N35) Research exposition (monographs, survey articles) pertaining to statistical mechanics (82-02) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37)

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Cites work

• A numerical comparison of outflow boundary conditions for spectral element simulations of incompressible flows
• Subband decomposition approach for the simulation of quantum electron transport in nanostructures

Cited in

(9)

• Three-dimensional quantum simulation of multigate nanowire field effect transistors
• Perfectly matched layers for coupled nonlinear Schrödinger equations with mixed derivatives
• A new multilevel method for electrostatic problems through hierarchical loop basis
• Perfectly matched layers versus discrete transparent boundary conditions in quantum device simulations
• Multiscale Analysis and Computation for a Stationary Schrödinger--Poisson System in Heterogeneous Nanostructures
• Semiconductor nanodevice simulation by multidomain spectral method with Chebyshev, prolate spheroidal and Laguerre basis functions
• Time-dependent simulations of quantum waveguides using a time-splitting spectral method
• Pseudospectral method based on prolate spheroidal wave functions for semiconductor nanodevice simulation
• Boundary treatments in non-equilibrium Green's function (NEGF) methods for quantum transport in nano-MOSFETs

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