A two-surface problem of the electron flow in a semiconductor on the basis of kinetic theory
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Publication:2473358
drift-diffusion equationsHilbert expansionsecond-order boundary conditionssemiconductor Boltzmann equation
PDEs in connection with fluid mechanics (35Q35) Finite difference methods applied to problems in fluid mechanics (76M20) Asymptotic methods, singular perturbations applied to problems in fluid mechanics (76M45) Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Diffusion (76R50) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37)
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Cites work
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Cited in
(9)- A drift-collision balance for a Boltzmann--Poisson system in bounded domains
- High field mobility and diffusivity of an electron gas in silicon devices
- Kinetic boundary layers and fluid-kinetic coupling in semiconductors
- A boundary value problem for a kinetic model describing electron flow in a semiconductor
- scientific article; zbMATH DE number 1432308 (Why is no real title available?)
- Redheffer products and numerical approximation of currents in one-dimensional semiconductor kinetic models
- Two-dimensional modeling of electron flow through a poorly conducting layer
- Theory of the flow of electrons and holes in Germanium and other semiconductors
- Cross-diffusion limits in multispecies kinetic models
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