Representation of the solution to a model problem in semiconductor physics
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Publication:2480371
DOI10.1016/j.jmaa.2007.11.010zbMath1137.35330MaRDI QIDQ2480371
D. L. Tkachev, Alexander Blokhin
Publication date: 31 March 2008
Published in: Journal of Mathematical Analysis and Applications (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jmaa.2007.11.010
well-posedness; electric potential; mixed boundary conditions; Poisson equation; hydrodynamical models; space potential
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Local-in-time well-posedness of a regularized mathematical model for silicon MESFET, Regularity of the solution and well-posedness of a mixed problem for an elliptic system with quadratic nonlinearity in gradients, Asymptotic stability of the stationary solution for a new mathematical model of charge transport in semiconductors
Cites Work
- 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
- Linear asymptotic stability of the equilibrium state for the 2-D MEP hydrodynamical model of charge transport in semiconductors
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