Global well-posedness for the 4D epitaxial growth models

DOI10.1016/J.AML.2015.04.006zbMath1381.35070OpenAlexW2023174753MaRDI QIDQ289371

Jishan Fan, Yong Zhou

Publication date: 30 May 2016

Published in: Applied Mathematics Letters (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.aml.2015.04.006

zbMATH Keywords

well-posednessthin filmslope selectionepitaxy

Mathematics Subject Classification ID

Thin films (74K35) PDEs in connection with biology, chemistry and other natural sciences (35Q92) Initial value problems for higher-order parabolic equations (35K30) Strong solutions to PDEs (35D35)

Related Items (4)

Global well-posedness and regularity criteria for epitaxial growth models ⋮ Global well-posedness of weak solutions and a regularity criterion of strong solutions for an epitaxial growth model ⋮ Global well-posedness of solutions for the epitaxy thin film growth model ⋮ Global well-posedness and large time behavior of epitaxy thin film growth model

Cites Work

• Second-order Convex Splitting Schemes for Gradient Flows with Ehrlich–Schwoebel Type Energy: Application to Thin Film Epitaxy
• Thin film epitaxy with or without slope selection
• Stability Analysis of Large Time‐Stepping Methods for Epitaxial Growth Models

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