Charge transport in semiconductors and a finite volume scheme
DOI10.1007/978-3-642-20671-9_54zbMATH Open1246.78031OpenAlexW2168716344MaRDI QIDQ2902128FDOQ2902128
Authors: Klaus Gäertner 
Publication date: 17 August 2012
Published in: Finite Volumes for Complex Applications VI Problems & Perspectives (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/978-3-642-20671-9_54
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Cites Work
- Energetic Estimates and Asymptotics for Electro‐Reaction‐Diffusion Systems
- Existence of Bounded Steady State Solutions to Spin-Polarized Drift-Diffusion Systems
- Uniform exponential decay of the free energy for Voronoi finite volume discretized reaction-diffusion systems
- Exponential decay of the free energy for discretized electro-reaction–diffusion systems
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- Consistency of Semiconductor Modeling: An Existence/Stability Analysis for the Stationary Van Roosbroeck System
- On the basic equations for carrier transport in semiconductors
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- A finite volume scheme for nonlinear parabolic equations derived from one-dimensional local Dirichlet problems
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- Existence of Bounded Discrete Steady-State Solutions of the Van Roosbroeck System on Boundary Conforming Delaunay Grids
- Numerical Methods for Semiconductor Device Simulation
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Cited In (6)
- On gradient structures for Markov chains and the passage to Wasserstein gradient flows
- Charge transport in semiconductors with degeneracy effects
- A discretized \(k\)-space method for charge transport in semiconductors
- Numerical Simulation of Charge Transport in Semiconductor Devices Using Mixed Finite Elements
- High electric field approximation to charge transport in semiconductor devices
- Title not available (Why is that?)
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