An approach to decrease dimensions of field-effect transistors without p-n-junctions

DOI10.1142/S0217979214501902zbMATH Open1301.82064MaRDI QIDQ2934145FDOQ2934145

Authors: E. L. Pankratov, E. A. Bulaeva 

Publication date: 8 December 2014

Published in: International Journal of Modern Physics B (Search for Journal in Brave)

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zbMATH Keywords

field-effect transistorsanalytical approach to model transistorsdecreasing of dimensions of transistorsoptimization of technological process

Mathematics Subject Classification ID

PDEs in connection with statistical mechanics (35Q82) Statistical mechanics of semiconductors (82D37)

Cites Work

• Title not available (Why is that?)

Cited In (2)

• Low-dimensional light-emitting transistor with tunable recombination zone
• On the control of transport of a medicinal product in an organism

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