Optimized Cell Programming for Flash Memories With Quantizers
From MaRDI portal
Publication:2986389
Recommendations
- On the Capacity and Programming of Flash Memories
- Capacity-Achieving Codes That Mitigate Intercell Interference and Charge Leakage in Flash Memories
- Managing Device Lifecycle: Reconfigurable Constrained Codes for M/T/Q/P-LC Flash Memories
- Graded Bit-Error-Correcting Codes With Applications to Flash Memory
- Rank-Modulation Rewrite Coding for Flash Memories
- Trajectory Codes for Flash Memory
This page was built for publication: Optimized Cell Programming for Flash Memories With Quantizers
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q2986389)