Some properties of Si, Ge, and -Sn using pseudopotential theory

DOI10.1088/0253-6102/54/3/36zbMATH Open1219.82189OpenAlexW2018844403MaRDI QIDQ3010168FDOQ3010168

Authors: P. S. Vyas, B. Y. Thakore, P. N. Gajjar, A. R. Jani 

Publication date: 30 June 2011

Published in: Communications in Theoretical Physics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1088/0253-6102/54/3/36

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zbMATH Keywords

bulk modulustotal energysemiconductorpseudopotential

Mathematics Subject Classification ID

Statistical mechanics of crystals (82D25) Statistical mechanics of metals (82D35) Statistical mechanics of semiconductors (82D37)

Cited In (3)

• Elastic properties of group IV semiconductors by pseudopotential approach
• PSEUDOPOTENTIAL INVESTIGATION OF ELECTRONIC PROPERTIES OF C54- AND C49-TiSi₂
• Re-examining the electronic structure of germanium: a first-principle study

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