Quantum transport through 3D Dirac materials
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Publication:305318
DOI10.1016/J.AOP.2015.04.007zbMATH Open1343.82044arXiv1407.8048OpenAlexW3105693271MaRDI QIDQ305318FDOQ305318
Authors: M. Salehi, S. A. Jafari
Publication date: 29 August 2016
Published in: Annals of Physics (Search for Journal in Brave)
Abstract: Bismuth and its alloys provide a paradigm to realize three dimensional materials whose low-energy effective theory is given by Dirac equation in 3+1 dimensions. We study the quantum transport properties of three dimensional Dirac materials within the framework of Landauer-B"uttiker formalism. Charge carriers in normal metal satisfying the Schr"odinger equation, can be split into four-component with appropriate matching conditions at the boundary with the three dimensional Dirac material (3DDM). We calculate the conductance and the Fano factor of an interface separating 3DDM from a normal metal, as well as the conductance through a slab of 3DDM. Under certain circumstances the 3DDM appears transparent to electrons hitting the 3DDM. We find that electrons hitting the metal-3DDM interface from metallic side can enter 3DDM in a reversed spin state as soon as their angle of incidence deviates from the the direction perpendicular to interface. However the presence of a second interface completely cancels this effect.
Full work available at URL: https://arxiv.org/abs/1407.8048
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Time-dependent Schrödinger equations and Dirac equations (35Q41) Quantum dynamics and nonequilibrium statistical mechanics (general) (82C10) Transport processes in time-dependent statistical mechanics (82C70)
Cites Work
Cited In (6)
- Tunneling in Fermi systems with quadratic band crossing points
- Robustness and universality of surface states in Dirac materials
- Tunneling of multi-Weyl semimetals through a potential barrier under the influence of magnetic fields
- Asymmetric transport for magnetic Dirac equations
- Anomalous transport in nodal ring semimetal slabs induced by vertical confinement
- Transmission in pseudospin-1 and pseudospin-3/2 semimetals with linear dispersion through scalar and vector potential barriers
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