Performance of a Petrov-Galerkin algebraic multilevel preconditioner for finite element modeling of the semiconductor device drift-diffusion equations

DOI10.1002/nme.2902zbMath1202.82003OpenAlexW2075757167MaRDI QIDQ3062583

Ray S. Tuminaro, John N. Shadid, Marzio Sala, Paul T. Lin

Publication date: 28 December 2010

Published in: International Journal for Numerical Methods in Engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/nme.2902

zbMATH Keywords

finite elementmultigridgraph partitioningSchwarz domain decompositionsmoothed aggregationdrift-diffusionmultilevel preconditionerssemiconductor devicesNewton - Krylov

Mathematics Subject Classification ID

Related Items (5)

Towards large-scale multi-socket, multicore parallel simulations: Performance of an MPI-only semiconductor device simulator ⋮ Scalable implicit incompressible resistive MHD with stabilized FE and fully-coupled Newton-Krylov-AMG ⋮ A physics-based strategy for choosing initial iterate for solving drift-diffusion equations ⋮ Enriched residual free bubbles for semiconductor device simulation ⋮ A parallel fully coupled algebraic multilevel preconditioner applied to multiphysics PDE applications: Drift-diffusion, flow/transport/reaction, resistive MHD

Uses Software

• AztecOO
• Trilinos
• ParMETIS
• ML
• Chaco
• IFPACK
• Aztec
• CSparse

Cites Work

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• A Multigrid Preconditioner for the Semiconductor Equations
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• A multigrid approach for the solution of the 2D semiconductor equations

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