Accurate prediction of the volume inversion impact on undoped double gate MOSFET capacitances

DOI10.1002/JNM.745MaRDI QIDQ3064052zbMATH OpenOpenAlexFDO

Authors Oana Moldovan, Ferney A. Chaves, David Jiménez, Jean-Pierre Raskin, Benjamin Iñiguez

Publication date 20 December 2010

Published in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1002/jnm.745

zbMATH Keywords

DG MOSFETintrinsic capacitancesRFvolume inversion

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Motion of charged particles (78A35)

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