Electric-field-induced plasmon in AA-stacked bilayer graphene

DOI10.1016/J.AOP.2013.09.002MaRDI QIDQ306905zbMATH OpenOpenAlexFDO

Authors Y. C. Chuang, J. Y. Wu, M. F. Lin

Publication date 1 September 2016

Published in Annals of Physics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.aop.2013.09.002

zbMATH Keywords

electric fieldbilayer grapheneplasmonrandom-phase approximationtight-binding model

Mathematics Subject Classification ID

Symmetry breaking in quantum theory (81R40) Many-body theory; quantum Hall effect (81V70) Quantum dynamics and nonequilibrium statistical mechanics (general) (82C10) Interacting particle systems in time-dependent statistical mechanics (82C22)

Recommendations

• COLLECTIVE EXCITATIONS IN SEMICONDUCTOR AND GRAPHENE BILAYERS IN HIGH MAGNETIC FIELD
• Plasmon modes in 3-layer graphene structures: inhomogeneity effects
• Electronic instabilities of the AA-honeycomb bilayer
• QED and surface plasmons on graphene
• Magnetoplasmons in gapped graphene in a periodically modulated magnetic field

Cites work

• Self-Consistent Field Approach to the Many-Electron Problem

Cited in

(2)

• Plasmon modes in 3-layer graphene structures: inhomogeneity effects
• High energy shift in the optical conductivity spectrum of the bilayer graphene

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