Ab initio calculation of the deformation potential and photoelastic coefficients of silicon with a non-uniform finite-difference solver based on the local density approximation
DOI10.1016/J.CPC.2014.03.016zbMATH Open1344.82056OpenAlexW2041237205MaRDI QIDQ310099FDOQ310099
Authors: Jeremy Witzens 
Publication date: 7 September 2016
Published in: Computer Physics Communications (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.cpc.2014.03.016
Recommendations
- The effect of uniaxial stress on band structure and electron mobility of silicon
- Estimation of the deformation-potential constant for \(p\)-type isotropic polycrystalline silicon through the deformation potential of a \(p\)-type silicon single crystal
- Re-examining the electronic structure of germanium: a first-principle study
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- Plane-wave implementation of the real-space \(K \cdot p\) formalism and continuum elasticity theory
finite-differencescurvilinear coordinate transformsdeformation potentiallocal density approximationnon-uniform meshingphotoelastic tensorpiezo-optical effect
Cites Work
- Numerical methods for large eigenvalue problems
- Stress effects on the performance of optical waveguides.
- Orbital-dependent density functionals: theory and applications
- Quantum Theory of the Dielectric Constant in Real Solids
- Mathematical structure of the temporal gauge in quantum electrodynamics
- Deformation Potentials in Silicon. I. Uniaxial Strain
- Dielectric Constant with Local Field Effects Included
- A Simplification of the Hartree-Fock Method
- Self-consistent finite-difference electronic structure calculations
Cited In (8)
- Ab initio calculations of thermal radiative properties: the semiconductor GaAs
- Elastic properties of group IV semiconductors by pseudopotential approach
- First-principles LCPAO approach for insulators under finite electric fields with forces
- The effect of uniaxial stress on band structure and electron mobility of silicon
- Plane-wave implementation of the real-space \(K \cdot p\) formalism and continuum elasticity theory
- Re-examining the electronic structure of germanium: a first-principle study
- Influence of k-point sampling on stability of structures obtained by ab initio MD simulations
- Estimation of the deformation-potential constant for \(p\)-type isotropic polycrystalline silicon through the deformation potential of a \(p\)-type silicon single crystal
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