Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation
DOI10.1002/JNM.725zbMATH Open1183.78001OpenAlexW4244336759MaRDI QIDQ3406065FDOQ3406065
Authors: Joaquín Alvarado, Benjamin Iñiguez, Magali Estrada, Denis Flandre, Antonio Cerdeira 
Publication date: 12 February 2010
Published in: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1002/jnm.725
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Cites Work
Cited In (7)
- The predictive technology model in the late silicon era and beyond
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- An analytical study of undoped symmetric double gate MOSFET (SDG)
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