STUDY OF THE INHOMOGENEITY OF SCHOTTKY BARRIER HEIGHT IN NICKEL SILICIDE BY THE INTERNAL PHOTOEMISSION SPECTROSCOPY

DOI10.1142/S0217984906012110zbMATH Open1108.82336OpenAlexW1984124127MaRDI QIDQ3430583FDOQ3430583

Authors: S. H. Huang, Fengmin Wu 

Publication date: 22 March 2007

Published in: Modern Physics Letters B (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1142/s0217984906012110

Recommendations

• On the current-voltage characteristic of an ideal metal-semiconductor Schottky-barrier contact
• New possibilities for obtaining steeply nonlinear current-voltage characteristics in some semiconductor structures
• scientific article; zbMATH DE number 935361
• Temperature distribution in silicon-aluminum thin films with presence of thermal boundary resistance
• DECREASING OF SPATIAL DIMENSION OF A SERIAL OF DIFFUSED-JUNCTION RECTIFIERS IN A MULTILAYER STRUCTURE IN ACCOUNT WITH NONLINEAR EFFECTS: OPTIMIZATION OF ANNEALING TIME

zbMATH Keywords

annealingnickel silicidesckottky barrier inhomogeneitythe internal photoemission

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cites Work

• The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various Temperatures

Cited In (1)

• On the current-voltage characteristic of an ideal metal-semiconductor Schottky-barrier contact

This page was built for publication: STUDY OF THE INHOMOGENEITY OF SCHOTTKY BARRIER HEIGHT IN NICKEL SILICIDE BY THE INTERNAL PHOTOEMISSION SPECTROSCOPY

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q3430583)