A device adaptive inflow boundary condition for Wigner equations of quantum transport
DOI10.1016/J.JCP.2013.11.007zbMATH Open1349.81061OpenAlexW2110796307MaRDI QIDQ348646FDOQ348646
Authors: Haiyan Jiang, Tiao Lu, Wei Cai 
Publication date: 5 December 2016
Published in: Journal of Computational Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jcp.2013.11.007
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Cites Work
- Title not available (Why is that?)
- Quantum Transport: Atom to Transistor
- Variational Multiscale Models for Charge Transport
- Preface
- Adaptive Conservative Cell Average Spectral Element Methods for Transient Wigner Equation in Quantum Transport
- Accuracy of the Frensley inflow boundary condition for Wigner equations in simulating resonant tunneling diodes
- Boundary treatments in non-equilibrium Green's function (NEGF) methods for quantum transport in nano-MOSFETs
- Effect of boundary treatments on quantum transport current in the Green's function and Wigner distribution methods for a nano-scale DG-MOSFET
Cited In (6)
- THE INCLUSION OF A FINITE CAPTURE TIME IN NUMERICAL DEVICE SIMULATION
- A WENO-solver combined with adaptive momentum discretization for the Wigner transport equation and its application to resonant tunneling diodes
- Optimization modeling and simulating of the stationary Wigner inflow boundary value problem
- Parity-decomposition and moment analysis for stationary Wigner equation with inflow boundary conditions
- Accuracy of the Frensley inflow boundary condition for Wigner equations in simulating resonant tunneling diodes
- Classical limit for the varying-mass Schrödinger equation with random inhomogeneities
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