A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices
From MaRDI portal
(Redirected from Publication:3565067)
Recommendations
- Three-dimensional quantum simulation of multigate nanowire field effect transistors
- Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs
- Wigner Ensemble Monte Carlo: Challenges of 2D Nano-Device Simulation
- scientific article; zbMATH DE number 1967753
- Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices
Cited in
(8)- Three-dimensional quantum simulation of multigate nanowire field effect transistors
- Accurate numerical models for simulation of radiation events in nano-scale semiconductor devices
- Electro-thermo-chemical computational models for 3D heterogeneous semiconductor device simulation
- Efficient Numerical Solution of the 3-D Semiconductor Poisson Equation for {Monte Carlo} Device Simulation
- scientific article; zbMATH DE number 434571 (Why is no real title available?)
- COMPUTER SIMULATION OF ZnO FIELD-EFFECT TRANSISTOR FOR HIGH-POWER AND HIGH-TEMPERATURE APPLICATIONS USING THE MONTE CARLO METHOD
- Monte Carlo Simulation of Narrow-Width SOI Devices: Incorporation of the Short Range Coulomb Interaction
- Highly functional tunnelling devices integrated in 3D
This page was built for publication: A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q3565067)