The fourth element: characteristics, modelling and electromagnetic theory of the memristor

DOI10.1098/RSPA.2009.0553zbMATH Open1193.78014arXiv1002.3210OpenAlexW2163105747WikidataQ62044595 ScholiaQ62044595MaRDI QIDQ3575283FDOQ3575283

Authors:

Publication date: 27 July 2010

Published in: Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences (Search for Journal in Brave)

Abstract: In 2008, researchers at HP Labs published a paper in {it Nature} reporting the realisation of a new basic circuit element that completes the missing link between charge and flux-linkage, which was postulated by Leon Chua in 1971. The HP memristor is based on a nanometer scale TiO${}_2$ thin-film, containing a doped region and an undoped region. Further to proposed applications of memristors in artificial biological systems and nonvolatile RAM (NVRAM), they also enable reconfigurable nanoelectronics. Moreover, memristors provide new paradigms in application specific integrated circuits (ASICs) and field programmable gate arrays (FPGAs). A significant reduction in area with an unprecedented memory capacity and device density are the potential advantages of memristors for Integrated Circuits (ICs). This work reviews the memristor and provides mathematical and SPICE models for memristors. Insight into the memristor device is given via recalling the quasi-static expansion of Maxwell's equations. We also review Chua's arguments based on electromagnetic theory.

Full work available at URL: https://arxiv.org/abs/1002.3210

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zbMATH Keywords

memristordynamic systemsnonlinear circuit theorynon-volatile memorySPICE macro-model

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Statistical mechanics of semiconductors (82D37)

Cited In (26)

• Composite characteristics of memristor series and parallel circuits
• DAEs in circuit modelling: a survey
• An analogue model of the memristor
• Bifurcation without parameters in circuits with memristors: a DAE approach
• Mathematical modeling of memristor in the presence of noise
• MEMRISTOR OSCILLATORS
• SPICE mutator model for transforming memristor into meminductor
• A double-wing chaotic system based on ion migration memristor and its sliding mode control
• Dynamical analysis of a fractional-order boost converter with fractional-order memristive load
• Dynamics, analysis and implementation of a multiscroll memristor-based chaotic circuit
• Modeling and analysis of a fractional-order generalized memristor-based chaotic system and circuit implementation
• Transcritical bifurcation without parameters in memristive circuits
• A family of memristive-transfer functions of negative-feedback nullor-based amplifiers
• A phenomenological memristor model for short-term/long-term memory
• The flyby anomaly and the effect of a topological torsion current
• Saddle-node bifurcations in classical and memristive circuits
• On an eigenvalue problem with a reciprocal-linear term
• A review of the inerter and inerter-based vibration isolation: theory, devices, and applications
• Design of a memcapacitor emulator based on a memristor
• The elusive memristor: properties of basic electrical circuits
• Hodgkin-Huxley axon is made of memristors
• Suppressing chaos in a simplest autonomous memristor-based circuit of fractional order by periodic impulses
• Memristor computing systems
• A novel modeling methodology for memristive systems using homotopy perturbation methods
• A memristive neuron and its adaptability to external electric field
• Dynamical behaviors of coupled memristor-based oscillators with identical and different nonlinearities

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