Capacitive model for integrated PN varactors of cells with N^+ buried layer

DOI10.1002/JNM.751MaRDI QIDQ3585591zbMATH OpenOpenAlexFDO

Authors

Publication date 20 August 2010

Published in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1002/jnm.751

zbMATH Keywords

PN junctionradiofrequencycapacitive modelintegrated varactor

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Waves and radiation in optics and electromagnetic theory (78A40)

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Cites work

• Identification of doping profiles in semiconductor devices

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