Capacitive model for integrated PN varactors of cells with N^+ buried layer

DOI10.1002/JNM.751zbMATH Open1197.78027OpenAlexW4245121800MaRDI QIDQ3585591FDOQ3585591

Authors:

Publication date: 20 August 2010

Published in: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/jnm.751

Recommendations

• Accurate substrate modelling of RF CMOS
• scientific article; zbMATH DE number 125138
• Design and synthesis of wide tuning range variable comb drive MEMS capacitors
• The gate to body capacitance of a MOSFET by asymptotic analysis
• High-frequency simulations and compact models compared with measurements for passive on-chip components

zbMATH Keywords

PN junctionradiofrequencycapacitive modelintegrated varactor

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Waves and radiation in optics and electromagnetic theory (78A40)

Cites Work

• Identification of doping profiles in semiconductor devices

This page was built for publication: Capacitive model for integrated PN varactors of cells with \(N^{+}\) buried layer

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q3585591)