Speeding up the simulation of the semiconductor device under microwave interference

DOI10.1108/03321641011028350zbMATH Open1194.78059OpenAlexW1970449114MaRDI QIDQ3589006FDOQ3589006

Authors: Xi Chen, Zhengwei du, Ke Gong 

Publication date: 10 September 2010

Published in: COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/03321641011028350

Recommendations

• scientific article; zbMATH DE number 4110040
• Efficiency considerations for the Boltzmann-Poisson system for semiconductors
• Monte Carlo simulation of microwave devices
• Fast Optimal Design of Semiconductor Devices
• Physics-based simulation of nonlinear distortion in semiconductor devices using the harmonic balance method

zbMATH Keywords

simulationelectromagnetismNewton methodsemiconductorsmicrowaves

Mathematics Subject Classification ID

Numerical computation of solutions to systems of equations (65H10) Finite difference methods applied to problems in optics and electromagnetic theory (78M20) Statistical mechanics of semiconductors (82D37)

Cited In (3)

• Simulation and Measurement of Interconnects and On-Chip Passives: Gauge Fields and Ghosts as Numerical Tools
• Improved numerical methods for the simulation of microwave circuits
• Simulation of femtosecond pulsed laser effects on MOS electronics using TCAD Sentaurus customized models

This page was built for publication: Speeding up the simulation of the semiconductor device under microwave interference

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q3589006)