Speeding up the simulation of the semiconductor device under microwave interference

DOI10.1108/03321641011028350zbMATH Open1194.78059OpenAlexW1970449114MaRDI QIDQ3589006FDOQ3589006

Authors: Xi Chen, Zhengwei du, Ke Gong 

Publication date: 10 September 2010

Published in: COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/03321641011028350

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zbMATH Keywords

simulationelectromagnetismNewton methodsemiconductorsmicrowaves

Mathematics Subject Classification ID

Numerical computation of solutions to systems of equations (65H10) Finite difference methods applied to problems in optics and electromagnetic theory (78M20) Statistical mechanics of semiconductors (82D37)

Cited In (3)

• Simulation and Measurement of Interconnects and On-Chip Passives: Gauge Fields and Ghosts as Numerical Tools
• Improved numerical methods for the simulation of microwave circuits
• Simulation of femtosecond pulsed laser effects on MOS electronics using TCAD Sentaurus customized models

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