Speeding up the simulation of the semiconductor device under microwave interference

DOI10.1108/03321641011028350MaRDI QIDQ3589006zbMATHOpenAlexFDO

Authors Xi Chen, Zhengwei du, Ke Gong

Publication date 10 September 2010

Published in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1108/03321641011028350

zbMATH Keywords

simulationelectromagnetismNewton methodsemiconductorsmicrowaves

Mathematics Subject Classification ID

Numerical computation of solutions to systems of equations (65H10) Finite difference methods applied to problems in optics and electromagnetic theory (78M20) Statistical mechanics of semiconductors (82D37)

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(3)

• Simulation and Measurement of Interconnects and On-Chip Passives: Gauge Fields and Ghosts as Numerical Tools
• Improved numerical methods for the simulation of microwave circuits
• Simulation of femtosecond pulsed laser effects on MOS electronics using TCAD Sentaurus customized models

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