Large‐signal device simulation in time‐ and frequency‐domain: a comparison

DOI10.1108/03321640810905792zbMath1158.78339OpenAlexW2019204118MaRDI QIDQ3613711

Giovanni Ghione, Fabrizio Bonani, Simona Donati Guerrieri, Francesco Bertazzi

Publication date: 12 March 2009

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/03321640810905792

zbMATH Keywords

modellingsemiconductorsmicrowave transistors

Mathematics Subject Classification ID

Cites Work

• Physics-based simulation of nonlinear distortion in semiconductor devices using the harmonic balance method

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