Comparing Kinetic and MEP Model of Charge Transport in Semiconductors

DOI10.1007/978-3-540-71992-2_83zbMATH Open1308.82080OpenAlexW96841056MaRDI QIDQ3618136FDOQ3618136

Authors Vittorio Romano, A. Majorana

Publication date 31 March 2009

Published in Progress in Industrial Mathematics at ECMI 2006 (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1007/978-3-540-71992-2_83

Mathematics Subject Classification ID

Nonlinear first-order PDEs (35F20) PDEs in connection with statistical mechanics (35Q82) Statistical mechanics of semiconductors (82D37)

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Cited in

(7)

• Numerical Solutions of the Spatially Homogeneous Boltzmann Equation for Electrons in n-Doped Graphene on a Substrate
• Study of the jump conditions for the 2D MEP hydrodynamical model of charge transport in semiconductors
• On the formulation of quantum maximum entropy principle for the transport of hot carriers in the semiconductors
• Criteria of local thermal equilibrium for silicon semiconductors
• Maximum entropy moment system of the semiconductor Boltzmann equation using Kane's dispersion relation
• Comparing kinetic and MEP model of charge transport in graphene
• Maximum entropy principle for hydrodynamic analysis of the fluctuations of moments for the hot carriers in semiconductors

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