Comparing Kinetic and MEP Model of Charge Transport in Semiconductors
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Publication:3618136
DOI10.1007/978-3-540-71992-2_83zbMATH Open1308.82080OpenAlexW96841056MaRDI QIDQ3618136FDOQ3618136
Authors: Vittorio Romano, A. Majorana 
Publication date: 31 March 2009
Published in: Progress in Industrial Mathematics at ECMI 2006 (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/978-3-540-71992-2_83
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- Criteria of local thermal equilibrium for silicon semiconductors
- Maximum entropy moment system of the semiconductor Boltzmann equation using Kane's dispersion relation
- Maximum entropy principle for hydrodynamic analysis of the fluctuations of moments for the hot carriers in semiconductors
- On the formulation of quantum maximum entropy principle for the transport of hot carriers in the semiconductors
- Comparing kinetic and MEP model of charge transport in graphene
- Numerical Solutions of the Spatially Homogeneous Boltzmann Equation for Electrons in n-Doped Graphene on a Substrate
- Study of the jump conditions for the 2D MEP hydrodynamical model of charge transport in semiconductors
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