Simulation of the Transient Behavior of a One-Dimensional Semiconductor Device II

DOI10.1137/0726032zbMath0669.65086MaRDI QIDQ3823108

Maria Cristina J. Squeff, Irene Martínez Gamba

Publication date: 1989

Published in: SIAM Journal on Numerical Analysis (Search for Journal in Brave)

Full work available at URL: https://semanticscholar.org/paper/85bf0e199e4327952e61bb86339c7518d60fce78

zbMATH Keywords

error estimates; mixed finite-element method; semiconductor device; semiconductor simulation; method of characteristic; Einstein relations; conductivity equations

Mathematics Subject Classification ID

65M60: Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs

65M25: Numerical aspects of the method of characteristics for initial value and initial-boundary value problems involving PDEs

78A55: Technical applications of optics and electromagnetic theory

65M15: Error bounds for initial value and initial-boundary value problems involving PDEs

35Q99: Partial differential equations of mathematical physics and other areas of application

65Z05: Applications to the sciences

78A35: Motion of charged particles

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