A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors
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Publication:4442450
DOI10.1137/S1064827501396440zbMath1163.65332MaRDI QIDQ4442450
Stefan Holst, Ansgar Jüngel, Paola Pietra
Publication date: 20 January 2004
Published in: SIAM Journal on Scientific Computing (Search for Journal in Brave)
mixed finite elements; semiconductors; exponential fitting; two-dimensional metal-semiconductor field-effect transistor
65N30: Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs
82D55: Statistical mechanics of superconductors
78A35: Motion of charged particles
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