A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors
From MaRDI portal
Publication:4442450
DOI10.1137/S1064827501396440zbMath1163.65332MaRDI QIDQ4442450
Stefan Holst, Ansgar Jüngel, Paola Pietra
Publication date: 20 January 2004
Published in: SIAM Journal on Scientific Computing (Search for Journal in Brave)
mixed finite elements; semiconductors; exponential fitting; two-dimensional metal-semiconductor field-effect transistor
65N30: Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs
82D55: Statistical mechanics of superconductors
78A35: Motion of charged particles
Related Items
Numerical Schemes for Semiconductors Energy-Transport Models, 2D numerical simulation of the MEP energy-transport model with a finite difference scheme, A relaxation scheme for the hydrodynamic equations for semiconductors, Robust numerical methods for singularly perturbed differential equations: a survey covering 2008-2012, Analysis of numerical schemes for semiconductor energy-transport models, Numerical analysis of DDFV schemes for semiconductors energy-transport models, Mixed finite element analysis for the Poisson-Nernst-Planck/Stokes coupling, An a priori error estimate for a monotone mixed finite-element discretization of a convection-diffusion problem, Energy transport in semiconductor devices, Exponentially fitted discontinuous Galerkin schemes for singularly perturbed problems, Discrete duality finite volume schemes for two‐dimensional drift‐diffusion and energy‐transport models, SIMULATION OF THERMAL EFFECTS IN OPTOELECTRONIC DEVICES USING COUPLED ENERGY-TRANSPORT AND CIRCUIT MODELS, A GLOBALLY CONVERGENT GUMMEL MAP FOR OPTIMAL DOPANT PROFILING