Improving the quality of meshes for the simulation of semiconductor devices using Lepp‐based algorithms
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Publication:4446788
DOI10.1002/nme.767zbMath1033.82003OpenAlexW2011062475MaRDI QIDQ4446788
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Publication date: 3 February 2004
Published in: International Journal for Numerical Methods in Engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1002/nme.767
semiconductor device simulationDelaunay meshescontrol volume methodLepp-based algorithmsnon-obtuse boundary meshes
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Mesh quality improvement and other properties in the four-triangles longest-edge partition, Propagation of longest-edge mesh patterns in local adaptive refinement, There are simple and robust refinements (almost) as good as Delaunay, Recent progress in robust and quality Delaunay mesh generation, Lepp-bisection algorithms, applications and mathematical properties
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