Analytical transient response of MOS current mirrors
From MaRDI portal
Publication:4452403
DOI10.1002/CTA.244zbMATH Open1035.94542OpenAlexW2166100219MaRDI QIDQ4452403FDOQ4452403
Authors: Ayman I. Kayssi
Publication date: 12 February 2004
Published in: International Journal of Circuit Theory and Applications (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1002/cta.244
Recommendations
- Parameter extraction and modelling of the MOS transistor by an equivalent resistance
- scientific article; zbMATH DE number 2158973
- A novel ultra-low-power, low-voltage, ultra-high output resistance and uniquely high bandwidth femto-ampere current mirror
- Analytic transient solution of SCFL logic gates
- Simple and accurate modeling of the output transition time in nanometer CMOS gates
Cited In (3)
This page was built for publication: Analytical transient response of MOS current mirrors
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q4452403)