scientific article; zbMATH DE number 1526082

DOI10.1002/1097-0207(20001020)49:5%3C639::AID-NME968%3E3.0.CO;2-PMaRDI QIDQ4512884zbMATH OpenFDO

Authors A. J. García-Loureiro, Tomás F. Pena, Juan M. Lopez-Gonzalez, Lluis Prat

Publication date 6 November 2000

Full work available at URL https://doi.org/10.1002/1097-0207(20001020)49:5%3C639::AID-NME968%3E3.0.CO;2-P

zbMATH Keywords

abrupt heterojunction bipolar transistorsdistributed memory multicomputersdomain decomposition methodsfinite element methodparallel solverPoisson equationsemiconductors

Mathematics Subject Classification ID

Multigrid methods; domain decomposition for initial value and initial-boundary value problems involving PDEs (65M55) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Parallel numerical computation (65Y05) Finite element, Galerkin and related methods applied to problems in optics and electromagnetic theory (78M10)

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Cited in

(6)

• A direct solution of Poisson's equation in a three-dimensional field- effect transistor structure
• Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs
• FEM and BEM parallel processing: theory and applications – a bibliography (1996‐2002)
• A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors
• Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes
• Development of a parallel Poisson's equation solver with adaptive mesh refinement and its application in field emission prediction

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Uses Software

• METIS

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