Theoretical modeling for quantum-confined Stark effect due to internal piezoelectric fields in GaInN strained quantum wells

DOI10.1016/J.PHYSLETA.2009.10.016zbMATH Open1248.82080OpenAlexW1970082686MaRDI QIDQ455055FDOQ455055

Authors: H. R. Alaei, H. Eshghi 

Publication date: 4 October 2012

Published in: Physics Letters. A (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.physleta.2009.10.016

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zbMATH Keywords

piezoelectric fieldquantum confined Stark effectstrained GaInN quantum wellsstructural-dependent carrier effective mass

Mathematics Subject Classification ID

Closed and approximate solutions to the Schrödinger, Dirac, Klein-Gordon and other equations of quantum mechanics (81Q05) Statistical mechanics of semiconductors (82D37) Statistical mechanics of ferroelectrics (82D45)

Cited In (7)

• Effect of electric fields on the transmission of a double heterostructure based on GaN with a quantum well
• Barrier effects on the optoelectronic properties of GaN-based irregular multiple quantum wells for dichromatic white LEDs
• Quantum confined Stark effect on intersubband transitions in strained wurtzite nitride quantum wells
• Interplay between Coulomb interaction and quantum-confined Stark-effect in polar and nonpolar wurtzite InN/GaN quantum dots
• Analysis of boundary conditions for the envelope functions of \(\mathrm{GaN}/\mathrm{InGaN}(0001)\) heterostructures
• Giant optical anisotropy in \(M\)-plane GaN/AlGaN quantum wells due to crystal-field effect
• THE OPTICAL KERR EFFECT IN WURTZITEGaN-BASED DOUBLE QUANTUM WELLS: INFLUENCES OF PIEZOELECTRICITY AND SPONTANEOUS POLARIZATION

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