Supersymmetry across nanoscale heterojunction

DOI10.1016/J.PHYSLETA.2010.04.001zbMATH Open1248.82066arXiv1002.2732OpenAlexW2095237888MaRDI QIDQ455175FDOQ455175

Authors: B. Bagchi, A. Ganguly, A. Sinha 

Publication date: 4 October 2012

Published in: Physics Letters. A (Search for Journal in Brave)

Abstract: We argue that supersymmetric transformation could be applied across the heterojunction formed by joining of two mixed semiconductors. A general framework is described by specifying the structure of ladder operators at the junction for making quantitative estimation of physical quantities. For a particular heterojunction device, we show that an exponential grading inside a nanoscale doped layer is amenable to exact analytical treatment for a class of potentials distorted by the junctions through the solutions of transformed Morse-Type potentials.

Full work available at URL: https://arxiv.org/abs/1002.2732

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zbMATH Keywords

supersymmetrysemiconductoreffective band-parametersnanoscale heterojunction

Mathematics Subject Classification ID

Supersymmetric field theories in quantum mechanics (81T60) Statistical mechanics of semiconductors (82D37) Statistical mechanics of nanostructures and nanoparticles (82D80)

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Cited In (2)

• Exact solution of the position-dependent effective mass and angular frequency Schrödinger equation: harmonic oscillator model with quantized confinement parameter
• Generalized Korteweg-de Vries equation induced from position-dependent effective mass quantum models and mass-deformed soliton solution through inverse scattering transform

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